Investigating the optoelectronic properties of silver-doped zirconium sulfide nanostructures synthesized via electrochemical deposition
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Description
This study primarily focuses on investigating a nanostructured material synthesized through the electrochemical deposition of zirconium sulfide (ZrS) doped with silver (Ag). The study focuses on understanding the influence of silver doping on the structural, optical, and electrical characteristics of ZrS nanostructures to enhance their potential for optoelectronic applications. The nanostructures were fabricated using a controlled electrochemical deposition technique, followed by structural characterization through X-ray diffraction (XRD) and scanning electron microscopy (SEM). The structural, morphological, and optical properties of the films were analyzed using: Bruker D8-Advance for structural properties, MIRA3 TESCAN for surface morphology, UV visible spectrophotometry (756S) for optical properties and measuring wavelength from 300 to 1100 nm. The 2θ values of (23.59, 34.91, 48.42, and 62.62) o are associated with diffraction planes (101), (103), (111), and (112). The slight shifts in peak positions seen in ZrS with Ag doping suggest changes in interatomic distances or lattice strain. The peak aligns with the crystal plane (101) of ZrS'. A stable and well-defined crystalline structure has been observed. Before Ag doping, the ZrS phase is observed with characteristic diffraction peaks corresponding to a specific crystalline structure (likely a hexagonal or orthorhombic phase). Adding Ag atoms disrupts the typical lattice arrangement in ZrS, leading to changes in phase stability and the formation of new phases at certain temperatures. Temperature affects grain size in both ZrS and Ag-doped ZrS. Atomic movement was restricted at 35°C, leading to the formation of smaller grains, while at 45°C, increased mobility led to grain growth. Increased temperatures boost the mobility of charge carriers, improving conductivity and possibly absorbance properties of the material. Due to its intrinsic electronic transitions, ZrS shows a unique absorbance profile at lower temperatures (35°C). At 45°C, shifts in absorbance peaks or changes in intensity occur because of variations in vibrational modes and energy levels. The bandgap energy of Ag-doped ZrS decreases as the temperature increases, with values of 1.98 eV, 1.57 eV, and 1.53 eV at 35°C, 40°C, and 45°C, respectively. The ZrS nanostructures exhibit a well-defined morphology, possibly nanosheets or nanorods. SEM images showed a uniform nanostructure in Ag-doped ZrS films, with increased grain size and roughness at higher doping levels. EDS confirmed Ag incorporation, and elemental mapping revealed its homogeneous distribution. The optical absorption spectra showed a shift in the absorption edge with increasing Ag doping, while Tauc’s plot revealed a corresponding reduction in band gap energy (Eg). This decrease in Eg suggests enhanced optoelectronic properties, making Ag-ZrS promising for photovoltaic and photodetector applications. Additionally, the increased absorption in the visible range indicates improved light harvesting capability. Keywords: bandgap energy; zirconium, silver, metals, semiconductors, temperature